• image of Bipolar RF Transistors>2SC5820WU-TL-E
  • image of Bipolar RF Transistors>2SC5820WU-TL-E
2SC5820WU-TL-E
Bipolar RF Transistors
Intersil (Renesas Electronics Corporation)
SMALL SIGNAL BI
-
Bulk
1159
1

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image of Bipolar RF Transistors>2SC5820WU-TL-E
image of Bipolar RF Transistors>2SC5820WU-TL-E
2SC5820WU-TL-E
Bipolar RF Transistors
Intersil (Renesas Electronics Corporation)
SMALL SIGNAL BI
-
Bulk
3000
1
2SC5820WU-TL-E
瑞萨-Renesas
Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
2SC5820WU-TL-E
瑞萨-Renesas
Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
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TYPEDESCRIPTION
MfrIntersil (Renesas Electronics Corporation)
Series-
PackageBulk
Product StatusACTIVE
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain17.5dB
Power - Max100mW
Current - Collector (Ic) (Max)35mA
Voltage - Collector Emitter Breakdown (Max)4V
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 20mA, 2V
Frequency - Transition20GHz
Noise Figure (dB Typ @ f)1.15dB @ 1.8GHz
Supplier Device PackageCMPAK-4

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