| ： | ALD212900APAL |
|---|---|
| ： | FET, MOSFET Arrays |
| ： | Advanced Linear Devices, Inc. |
| ： | MOSFET 2N-CH 10 |
| ： | - |
| ： | Tube |
| ： | 50 |
| ： | 1 |
| TYPE | DESCRIPTION |
| Mfr | Advanced Linear Devices, Inc. |
| Series | EPAD®, Zero Threshold™ |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | 8-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Dual) Matched Pair |
| Operating Temperature | 0°C ~ 70°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 10.6V |
| Current - Continuous Drain (Id) @ 25°C | 80mA |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 5V |
| Rds On (Max) @ Id, Vgs | 14Ohm |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 10mV @ 20µA |
| Supplier Device Package | 8-PDIP |
