• image of RF Transceiver ICs>BC313141A18-IXF-E4
  • image of RF Transceiver ICs>BC313141A18-IXF-E4
BC313141A18-IXF-E4
RF Transceiver ICs
Qualcomm
IC RF TXRX+MCU
-
Cut Tape (CT)
2000
1

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image of RF Transceiver ICs>BC313141A18-IXF-E4
image of RF Transceiver ICs>BC313141A18-IXF-E4
BC313141A18-IXF-E4
RF Transceiver ICs
Qualcomm
IC RF TXRX+MCU
-
Cut Tape (CT)
1988
1
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
RFMi
SAW Filters, Notch Filters
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
创基-CBI
场效应晶体管
BC313141A18-IXF-E4
RFMi
SAW Filters, Notch Filters
TYPEDESCRIPTION
MfrQualcomm
SeriesBlueCore®
PackageCut Tape (CT)
Product StatusOBSOLETE
Package / Case42-WFBGA, WLCSP
Sensitivity-85.5dBm
Mounting TypeSurface Mount
Frequency2.4GHz
Memory Size4MB ROM
TypeTxRx + MCU
Operating Temperature-40°C ~ 150°C
Voltage - Supply1.8V ~ 3.6V
Power - Output4dBm
ProtocolBluetooth v1.2, Class 2 and 3
Data Rate (Max)723.2kbps
Supplier Device Package42-CSP (3.79x3.35)
RF Family/StandardBluetooth
DigiKey ProgrammableNot Verified

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