• image of Memory>BY25Q128ESSIG(T)
  • image of Memory>BY25Q128ESSIG(T)
BY25Q128ESSIG(T)
Memory
BYTe Semiconductor
128 MBIT, 3.0V
-
Tube
95
1

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image of Memory>BY25Q128ESSIG(T)
image of Memory>BY25Q128ESSIG(T)
BY25Q128ESSIG(T)
Memory
BYTe Semiconductor
128 MBIT, 3.0V
-
Tube
9500
1
PDF(1)
TYPEDESCRIPTION
MfrBYTe Semiconductor
Series-
PackageTube
Product StatusACTIVE
Package / Case8-SOIC (0.209", 5.30mm Width)
Mounting TypeSurface Mount
Memory Size128Mbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NOR (SLC)
Clock Frequency120 MHz
Memory FormatFLASH
Supplier Device Package8-SOP
Write Cycle Time - Word, Page60µs, 2.4ms
Memory InterfaceSPI - Quad I/O
Access Time7.5 ns
Memory Organization16M x 8

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