• image of Memory>BY25Q16BSUJG(R)
  • image of Memory>BY25Q16BSUJG(R)
BY25Q16BSUJG(R)
Memory
BYTe Semiconductor
16 MBIT, 3.0V (
-
Tape & Reel (TR)
3000
1

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image of Memory>BY25Q16BSUJG(R)
image of Memory>BY25Q16BSUJG(R)
BY25Q16BSUJG(R)
Memory
BYTe Semiconductor
16 MBIT, 3.0V (
-
Tape & Reel (TR)
0
1
PDF(1)
TYPEDESCRIPTION
MfrBYTe Semiconductor
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-UFDFN Exposed Pad
Mounting TypeSurface Mount
Memory Size16Mbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 105°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NOR (SLC)
Clock Frequency108 MHz
Memory FormatFLASH
Supplier Device Package8-USON (2x3)
Write Cycle Time - Word, Page60µs, 4ms
Memory InterfaceSPI - Quad I/O, QPI
Access Time7 ns
Memory Organization2M x 8

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