• image of Memory>BY25Q40BSTIG(R)
  • image of Memory>BY25Q40BSTIG(R)
BY25Q40BSTIG(R)
Memory
BYTe Semiconductor
4 MBIT, 3.0V (2
-
Tape & Reel (TR)
4000
1

captcha
image of Memory>BY25Q40BSTIG(R)
image of Memory>BY25Q40BSTIG(R)
BY25Q40BSTIG(R)
Memory
BYTe Semiconductor
4 MBIT, 3.0V (2
-
Tape & Reel (TR)
4000
1
PDF(1)
TYPEDESCRIPTION
MfrBYTe Semiconductor
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Memory Size4Mbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NOR (SLC)
Clock Frequency108 MHz
Memory FormatFLASH
Supplier Device Package8-SOP
Write Cycle Time - Word, Page50µs, 2.4ms
Memory InterfaceSPI - Quad I/O, QPI
Access Time7 ns
Memory Organization512K x 8

+86-15816200391

点击这里给我发消息
0