• image of Single FETs, MOSFETs>CGD65A055S2-T07
  • image of Single FETs, MOSFETs>CGD65A055S2-T07
CGD65A055S2-T07
Single FETs, MOSFETs
Cambridge GaN Devices
650V GAN HEMT,
-
Tape & Reel (TR)
1000
1

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image of Single FETs, MOSFETs>CGD65A055S2-T07
image of Single FETs, MOSFETs>CGD65A055S2-T07
CGD65A055S2-T07
Single FETs, MOSFETs
Cambridge GaN Devices
650V GAN HEMT,
-
Tape & Reel (TR)
737
1
PDF(1)
TYPEDESCRIPTION
MfrCambridge GaN Devices
SeriesICeGaN™
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case16-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C27A (Tc)
Rds On (Max) @ Id, Vgs77mOhm @ 2.2A, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 10mA
Supplier Device Package16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs6 nC @ 12 V

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