• image of Single FETs, MOSFETs>EPC2055
  • image of Single FETs, MOSFETs>EPC2055
EPC2055
Single FETs, MOSFETs
EPC
GANFET N-CH 40V
-
Tape & Reel (TR)
2500
1

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image of Single FETs, MOSFETs>EPC2055
image of Single FETs, MOSFETs>EPC2055
EPC2055
Single FETs, MOSFETs
EPC
GANFET N-CH 40V
-
Tape & Reel (TR)
34495
1
EPC2055
宜普-EPC
170 V, 102 A增强型功率晶体管
EPC2055
宜普-EPC
100 V, 37 A Enhancement-Mode GaN Power Transistor
EPC2055
宜普-EPC
增强型功率晶体管
EPC2055
宜普-EPC
100 V、246 A增强型功率晶体管
EPC2055
宜普-EPC
40 V, 161 A增强型功率晶体管
EPC2055
宜普-EPC
100 V, 74 A增强型功率晶体管
EPC2055
宜普-EPC
350 V, 26 A Enhancement-Mode GaN Power Transistor
EPC2055
宜普-EPC
170 V, 102 A增强型功率晶体管
EPC2055
宜普-EPC
100 V, 37 A Enhancement-Mode GaN Power Transistor
EPC2055
宜普-EPC
增强型功率晶体管
EPC2055
宜普-EPC
100 V、246 A增强型功率晶体管
EPC2055
宜普-EPC
40 V, 161 A增强型功率晶体管
EPC2055
宜普-EPC
100 V, 74 A增强型功率晶体管
EPC2055
宜普-EPC
350 V, 26 A Enhancement-Mode GaN Power Transistor
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TYPEDESCRIPTION
MfrEPC
SerieseGaN®
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CaseDie
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C29A (Ta)
Rds On (Max) @ Id, Vgs3.6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id2.5V @ 7mA
Supplier Device PackageDie
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)+6V, -4V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs8.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1111 pF @ 20 V

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