| Dash number： | EPC2106ENGRT |
|---|---|
| Product category： | FET, MOSFET Arrays |
| Manufacturer： | EPC |
| Type： | GANFET 2N-CH 10 |
| Encapsulation： | - |
| Packing： | Tape & Reel (TR) |
| Quantity： | 2500 |
| RoHS status： | 1 |
| TYPE | DESCRIPTION |
| Mfr | EPC |
| Series | eGaN® |
| Package | Tape & Reel (TR) |
| Product Status | DISCONTINUED |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 75pF @ 50V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 2A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.73nC @ 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 600µA |
| Supplier Device Package | Die |
