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  • image of Single FETs, MOSFETs>EPC2212
EPC2212
Single FETs, MOSFETs
EPC
GANFET N-CH 100
-
Tape & Reel (TR)
2500
1

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image of Single FETs, MOSFETs>EPC2212
image of Single FETs, MOSFETs>EPC2212
EPC2212
Single FETs, MOSFETs
EPC
GANFET N-CH 100
-
Tape & Reel (TR)
153697
1
EPC2212
宜普-EPC
200 V, 162 A增强型功率晶体管
EPC2212
宜普-EPC
面向车载应用的15 V、28 A增强型氮化镓功率晶体管
EPC2212
宜普-EPC
65 V, 0.5 A增强型功率晶体管
EPC2212
宜普-EPC
EPC2218A: Automotive 80 V, 231 A Enhancement-Mode GaN Power Transistor
EPC2212
宜普-EPC
100 V, 231 A增强型功率晶体管
EPC2212
宜普-EPC
面向车载应用的80 V、47 A增强型氮化镓功率晶体管
EPC2212
宜普-EPC
面向车载应用的100 V、75 A增强型氮化镓功率晶体管
EPC2212
宜普-EPC
200 V, 162 A增强型功率晶体管
EPC2212
宜普-EPC
面向车载应用的15 V、28 A增强型氮化镓功率晶体管
EPC2212
宜普-EPC
65 V, 0.5 A增强型功率晶体管
EPC2212
宜普-EPC
EPC2218A: Automotive 80 V, 231 A Enhancement-Mode GaN Power Transistor
EPC2212
宜普-EPC
100 V, 231 A增强型功率晶体管
EPC2212
宜普-EPC
面向车载应用的80 V、47 A增强型氮化镓功率晶体管
EPC2212
宜普-EPC
面向车载应用的100 V、75 A增强型氮化镓功率晶体管
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TYPEDESCRIPTION
MfrEPC
SerieseGaN®
PackageTape & Reel (TR)
Product StatusNOT_FOR_NEW_DESIGNS
Package / CaseDie
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Rds On (Max) @ Id, Vgs13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id2.5V @ 3mA
Supplier Device PackageDie
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)+6V, -4V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds407 pF @ 50 V

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