FBG30N04CSH
FET, MOSFET Arrays
EPC Space
GANFET 2N-CH 30
-
Bulk
1

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FBG30N04CSH
FET, MOSFET Arrays
EPC Space
GANFET 2N-CH 30
-
Bulk
50
PDF(1)
TYPEDESCRIPTION
MfrEPC Space
SerieseGaN®
PackageBulk
Product StatusACTIVE
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Configuration2 N-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds450pF @ 150V
Rds On (Max) @ Id, Vgs404mOhm @ 4A, 5V
Gate Charge (Qg) (Max) @ Vgs2.6nC @ 5V
Vgs(th) (Max) @ Id2.8V @ 600µA
Supplier Device Package4-SMD

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