• image of Single FETs, MOSFETs>G2K2P10D3E
  • image of Single FETs, MOSFETs>G2K2P10D3E
G2K2P10D3E
Single FETs, MOSFETs
Goford Semiconductor
MOSFET P-CH ESD
-
Tape & Reel (TR)
5000
1

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image of Single FETs, MOSFETs>G2K2P10D3E
image of Single FETs, MOSFETs>G2K2P10D3E
G2K2P10D3E
Single FETs, MOSFETs
Goford Semiconductor
MOSFET P-CH ESD
-
Tape & Reel (TR)
4970
1
G2K2P10D3E
谷峰-GOFORD
Trench Mosfet
G2K2P10D3E
谷峰-GOFORD
Trench Mosfet
PDF(1)
TYPEDESCRIPTION
MfrGoford Semiconductor
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Rds On (Max) @ Id, Vgs210mOhm @ 6A, 10V
Power Dissipation (Max)31W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1668 pF @ 50 V

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