• image of Single FETs, MOSFETs>G3R160MT17J
  • image of Single FETs, MOSFETs>G3R160MT17J
G3R160MT17J
Single FETs, MOSFETs
GeneSiC Semiconductor
SIC MOSFET N-CH
-
Tube
1000
1

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image of Single FETs, MOSFETs>G3R160MT17J
image of Single FETs, MOSFETs>G3R160MT17J
G3R160MT17J
Single FETs, MOSFETs
GeneSiC Semiconductor
SIC MOSFET N-CH
-
Tube
0
1
G3R160MT17J
基因碳化硅-GeneSiC
SiC MOSFET
G3R160MT17J
基因碳化硅-GeneSiC
SiC MOSFET
G3R160MT17J
基因碳化硅-GeneSiC
SiC MOSFET
G3R160MT17J
基因碳化硅-GeneSiC
SiC MOSFET
PDF(1)
TYPEDESCRIPTION
MfrGeneSiC Semiconductor
SeriesG3R™, LoRing™
PackageTube
Product StatusACTIVE
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Rds On (Max) @ Id, Vgs224mOhm @ 10A, 15V
Power Dissipation (Max)187W (Tc)
Vgs(th) (Max) @ Id2.7V @ 5mA
Supplier Device PackageTO-263-7
Drive Voltage (Max Rds On, Min Rds On)15V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)1700 V
Gate Charge (Qg) (Max) @ Vgs29 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds854 pF @ 1000 V

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