• image of Single Diodes>GD10MPS12H
  • image of Single Diodes>GD10MPS12H
GD10MPS12H
Single Diodes
GeneSiC Semiconductor
DIODE SIL CARB
-
Tube
30
1

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image of Single Diodes>GD10MPS12H
image of Single Diodes>GD10MPS12H
GD10MPS12H
Single Diodes
GeneSiC Semiconductor
DIODE SIL CARB
-
Tube
2806
1
GD10MPS12H
基因碳化硅-GeneSiC
SiC肖特基MPS™
GD10MPS12H
基因碳化硅-GeneSiC
SiC肖特基MPS™
GD10MPS12H
基因碳化硅-GeneSiC
SiC肖特基MPS™
GD10MPS12H
基因碳化硅-GeneSiC
SiC肖特基MPS™
GD10MPS12H
基因碳化硅-GeneSiC
SiC肖特基MPS™
GD10MPS12H
基因碳化硅-GeneSiC
SiC肖特基MPS™
PDF(1)
TYPEDESCRIPTION
MfrGeneSiC Semiconductor
SeriesSiC Schottky MPS™
PackageTube
Product StatusACTIVE
Package / CaseTO-247-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Current - Average Rectified (Io)10A
Supplier Device PackageTO-247-2
Operating Temperature - Junction175°C
Voltage - DC Reverse (Vr) (Max)1200 V

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