• image of Single Diodes>GP2D010A120C
  • image of Single Diodes>GP2D010A120C
  • image of Single Diodes>GP2D010A120C
  • image of Single Diodes>GP2D010A120C
GP2D010A120C
Single Diodes
SemiQ
DIODE SIL CARB
-
Tube
75
1

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image of Single Diodes>GP2D010A120C
image of Single Diodes>GP2D010A120C
image of Single Diodes>GP2D010A120C
GP2D010A120C
Single Diodes
SemiQ
DIODE SIL CARB
-
Tube
0
1
GP2D010A120C
SemiQ
碳化硅肖特基二极管裸芯片
GP2D010A120C
SemiQ
碳化硅肖特基二极管裸芯片
GP2D010A120C
SemiQ
碳化硅肖特基二极管裸芯片
GP2D010A120C
SemiQ
碳化硅肖特基二极管裸芯片
GP2D010A120C
SemiQ
碳化硅肖特基二极管裸芯片
GP2D010A120C
SemiQ
碳化硅肖特基二极管裸芯片
GP2D010A120C
SemiQ
碳化硅肖特基二极管裸芯片
GP2D010A120C
SemiQ
碳化硅肖特基二极管裸芯片
GP2D010A120C
SemiQ
碳化硅肖特基二极管裸芯片
GP2D010A120C
SemiQ
碳化硅肖特基二极管裸芯片
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TYPEDESCRIPTION
MfrSemiQ
SeriesAmp+™
PackageTube
Product StatusDISCONTINUED
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F635pF @ 1V, 1MHz
Current - Average Rectified (Io)10A
Supplier Device PackageTO-252 (DPAK)
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 10 A
Current - Reverse Leakage @ Vr20 µA @ 1200 V

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