| ： | IRF200B211XKMA1 |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | IR (Infineon Technologies) |
| ： | TRENCH >=100V |
| ： | - |
| ： | Tube |
| ： | 1000 |
| ： | 1 |
| TYPE | DESCRIPTION |
| Mfr | IR (Infineon Technologies) |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 7.2A, 10V |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 50µA |
| Supplier Device Package | PG-TO220-3-904 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V |
