• image of Single Diodes>IV1D12020T2
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IV1D12020T2
Single Diodes
Inventchip Technology
DIODE SIL CARB
-
Tube
30
1

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image of Single Diodes>IV1D12020T2
image of Single Diodes>IV1D12020T2
IV1D12020T2
Single Diodes
Inventchip Technology
DIODE SIL CARB
-
Tube
120
1
IV1D12020T2
瞻芯-IVCT
SiC SBD
IV1D12020T2
瞻芯-IVCT
SiC SBD
IV1D12020T2
瞻芯-IVCT
SiC SBD
IV1D12020T2
瞻芯-IVCT
SiC SBD
PDF(1)
TYPEDESCRIPTION
MfrInventchip Technology
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F1114pF @ 1V, 1MHz
Current - Average Rectified (Io)54A
Supplier Device PackageTO-247-2
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 20 A
Current - Reverse Leakage @ Vr120 µA @ 1200 V

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