• image of Bipolar RF Transistors>NE85633-T1B-A
  • image of Bipolar RF Transistors>NE85633-T1B-A
NE85633-T1B-A
Bipolar RF Transistors
CEL (California Eastern Laboratories)
SAME AS 2SC3356
-
Tape & Reel (TR)
3000
1

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image of Bipolar RF Transistors>NE85633-T1B-A
image of Bipolar RF Transistors>NE85633-T1B-A
NE85633-T1B-A
Bipolar RF Transistors
CEL (California Eastern Laboratories)
SAME AS 2SC3356
-
Tape & Reel (TR)
27000
1
NE85633-T1B-A
CEL
NPN SILICON HIGH FREQUENCY TRANSISTOR
NE85633-T1B-A
瑞萨-Renesas
NPN SILICON TRANSISTOR
NE85633-T1B-A
瑞萨-Renesas
NPN SILICON TRANSISTOR
NE85633-T1B-A
瑞萨-Renesas
NPN SILICON TRANSISTOR
NE85633-T1B-A
瑞萨-Renesas
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
NE85633-T1B-A
CEL
NONLINEAR MODEL
NE85633-T1B-A
CEL
NPN SILICON HIGH FREQUENCY TRANSISTOR
NE85633-T1B-A
瑞萨-Renesas
NPN SILICON TRANSISTOR
NE85633-T1B-A
瑞萨-Renesas
NPN SILICON TRANSISTOR
NE85633-T1B-A
瑞萨-Renesas
NPN SILICON TRANSISTOR
NE85633-T1B-A
瑞萨-Renesas
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
NE85633-T1B-A
CEL
NONLINEAR MODEL
PDF(1)
TYPEDESCRIPTION
MfrCEL (California Eastern Laboratories)
Series-
PackageTape & Reel (TR)
Product StatusOBSOLETE
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain11.5dB
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 10V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.1dB @ 1GHz
Supplier Device Package3-MINIMOLD

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