• image of Single FETs, MOSFETs>SIHB6N80AE-GE3
  • image of Single FETs, MOSFETs>SIHB6N80AE-GE3
SIHB6N80AE-GE3
Single FETs, MOSFETs
Vishay / Siliconix
E SERIES POWER
-
Tube
50
1

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image of Single FETs, MOSFETs>SIHB6N80AE-GE3
image of Single FETs, MOSFETs>SIHB6N80AE-GE3
SIHB6N80AE-GE3
Single FETs, MOSFETs
Vishay / Siliconix
E SERIES POWER
-
Tube
1040
1
PDF(1)
TYPEDESCRIPTION
MfrVishay / Siliconix
SeriesE
PackageTube
Product StatusACTIVE
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Rds On (Max) @ Id, Vgs950mOhm @ 2A, 10V
Power Dissipation (Max)62.5W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds422 pF @ 100 V

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