• image of Memory>TC58BYG2S0HBAI6
  • image of Memory>TC58BYG2S0HBAI6
Dash number TC58BYG2S0HBAI6
Product category Memory
Manufacturer Toshiba Memory America, Inc. (Kioxia America, Inc.)
Type IC FLASH 4GBIT
Encapsulation -
Packing Tray
Quantity 338
RoHS status 1

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image of Memory>TC58BYG2S0HBAI6
image of Memory>TC58BYG2S0HBAI6
Dash number
TC58BYG2S0HBAI6
Product category
Memory
Manufacturer
Toshiba Memory America, Inc. (Kioxia America, Inc.)
Type
IC FLASH 4GBIT
Encapsulation
-
Packing
Tray
Quantity
297
RoHS status
1
Product parameters
Product Description
PDF(1)
PDF(2)
TYPEDESCRIPTION
MfrToshiba Memory America, Inc. (Kioxia America, Inc.)
SeriesBenand™
PackageTray
Product StatusACTIVE
Package / Case67-VFBGA
Mounting TypeSurface Mount
Memory Size4Gbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply1.7V ~ 1.95V
TechnologyFLASH - NAND (SLC)
Memory FormatFLASH
Supplier Device Package67-VFBGA (6.5x8)
Write Cycle Time - Word, Page25ns
Memory InterfaceParallel
Access Time25 ns
Memory Organization512M x 8
DigiKey ProgrammableNot Verified

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