• image of Gate Drivers>TF2117
  • image of Gate Drivers>TF2117
TF2117
Gate Drivers
TF Semiconductor Solutions
600V, HIGH-SIDE
-
Tape & Reel (TR)
2500
1

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image of Gate Drivers>TF2117
image of Gate Drivers>TF2117
TF2117
Gate Drivers
TF Semiconductor Solutions
600V, HIGH-SIDE
-
Tape & Reel (TR)
5000
1
TF2117
TFSS
Gate Driver IC(TFSS)
TF2117
TFSS
Gate Driver IC(TFSS)
TF2117
TFSS
Triple High Side Gate Driver
TF2117
TFSS
High Side and Low Side Gate Driver
TF2117
TFSS
Gate Driver IC(TFSS)
TF2117
TFSS
Gate Driver IC(TFSS)
TF2117
TFSS
High Side and Low Side Gate Driver
TF2117
英飞凌-Infineon
LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
TF2117
英飞凌-Infineon
LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz
TF2117
TFSS
Gate Driver IC(TFSS)
TF2117
TFSS
Gate Driver IC(TFSS)
TF2117
TFSS
Triple High Side Gate Driver
TF2117
TFSS
High Side and Low Side Gate Driver
TF2117
TFSS
Gate Driver IC(TFSS)
TF2117
TFSS
Gate Driver IC(TFSS)
TF2117
TFSS
High Side and Low Side Gate Driver
TF2117
英飞凌-Infineon
LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz
TF2117
英飞凌-Infineon
LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz
PDF(1)
TYPEDESCRIPTION
MfrTF Semiconductor Solutions
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 125°C (TA)
Voltage - Supply10V ~ 20V
Input TypeNon-Inverting
Supplier Device Package8-SOIC
Rise / Fall Time (Typ)75ns, 35ns
Channel TypeSingle
Driven ConfigurationHigh-Side
Number of Drivers1
Gate TypeIGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH6V, 9.5V
Current - Peak Output (Source, Sink)290mA, 600mA
DigiKey ProgrammableNot Verified

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