• image of Single FETs, MOSFETs>TP65H300G4JSGB-TR
  • image of Single FETs, MOSFETs>TP65H300G4JSGB-TR
TP65H300G4JSGB-TR
Single FETs, MOSFETs
Transphorm
GANFET N-CH 650
-
Tape & Reel (TR)
4000

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image of Single FETs, MOSFETs>TP65H300G4JSGB-TR
image of Single FETs, MOSFETs>TP65H300G4JSGB-TR
TP65H300G4JSGB-TR
Single FETs, MOSFETs
Transphorm
GANFET N-CH 650
-
Tape & Reel (TR)
3942
PDF(1)
TYPEDESCRIPTION
MfrTransphorm
SeriesSuperGaN®
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.2A (Tc)
Rds On (Max) @ Id, Vgs312mOhm @ 6.5A, 6V
Power Dissipation (Max)41.6W (Tc)
Vgs(th) (Max) @ Id2.8V @ 500µA
Supplier Device Package8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)6V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds400 pF @ 400 V

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