• image of Single FETs, MOSFETs>TP65H300G4LSG-TR
  • image of Single FETs, MOSFETs>TP65H300G4LSG-TR
TP65H300G4LSG-TR
Single FETs, MOSFETs
Transphorm
GANFET N-CH 650
-
Tube
3000

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image of Single FETs, MOSFETs>TP65H300G4LSG-TR
image of Single FETs, MOSFETs>TP65H300G4LSG-TR
TP65H300G4LSG-TR
Single FETs, MOSFETs
Transphorm
GANFET N-CH 650
-
Tube
6507
PDF(1)
TYPEDESCRIPTION
MfrTransphorm
Series-
PackageTube
Product StatusACTIVE
Package / Case3-PowerDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.5A (Tc)
Rds On (Max) @ Id, Vgs312mOhm @ 5A, 8V
Power Dissipation (Max)21W (Tc)
Vgs(th) (Max) @ Id2.6V @ 500µA
Supplier Device Package3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)8V
Vgs (Max)±18V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs9.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 400 V

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