| ： | TP65H480G4JSGB-TR |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | Transphorm |
| ： | GANFET N-CH 650 |
| ： | - |
| ： | Tape & Reel (TR) |
| ： | 4000 |
| ： | |
| TYPE | DESCRIPTION |
| Mfr | Transphorm |
| Series | SuperGaN® |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 560mOhm @ 3A, 6V |
| Power Dissipation (Max) | 13.2W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 500µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 414 pF @ 400 V |
